GC20MPS12-247
DIODE SIL CARB 1.2KV 90A TO247-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GC20MPS12-247, a Silicon Carbide Schottky MPS™ series diode, offers a 1200 V maximum DC reverse voltage and 90 A average rectified forward current. This through-hole component, housed in a TO-247-2 package, features a low 1.8 V forward voltage at 20 A and an exceptionally low reverse leakage of 18 µA at 1200 V. Notably, it exhibits no reverse recovery time above 500 mA (Io), making it ideal for high-frequency switching applications. The operating junction temperature range is from -55°C to 175°C. This device is well-suited for power conversion, electric vehicle charging, and industrial motor control applications.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1298pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 90A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 18 µA @ 1200 V |
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