GC20MPS12-220
DIODE SIL CARB 1.2KV 94A TO220-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
Quality Control: Learn More
GeneSiC Semiconductor presents the GC20MPS12-220, a SiC Schottky MPS™ diode. This component features a 1200 V DC reverse voltage rating and a maximum forward voltage of 1.8 V at 20 A. The average rectified forward current handling capability is 94 A, with a low reverse leakage current of 18 µA at its maximum reverse voltage. Engineered with Silicon Carbide (SiC) technology, this diode exhibits no reverse recovery time above 500 mA, contributing to high-efficiency switching. The device is supplied in a TO-220-2 package for through-hole mounting and operates across a junction temperature range from -55°C to 175°C. The capacitance at 1V and 1MHz is 1298 pF. This component is suitable for applications in power factor correction, high-voltage power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1298pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 94A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 18 µA @ 1200 V |
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