GC15MPS12-247
DIODE SIL CARB 1.2KV 75A TO247-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor SiC Schottky MPS™ diode, part number GC15MPS12-247, features 1200 V reverse voltage and 75 A average rectified current. This TO-247-2 package device utilizes Silicon Carbide (SiC) Schottky technology, offering a forward voltage (Vf) of 1.8 V at 15 A and a negligible reverse leakage current of 14 µA at 1200 V. Its exceptionally fast switching characteristics are defined by zero reverse recovery time for currents exceeding 500 mA (Io). The GC15MPS12-247 is suitable for high-performance applications in power factor correction, electric vehicle charging, and industrial power supplies, operating efficiently across a junction temperature range of -55°C to 175°C. The device is supplied in tube packaging.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1089pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 75A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 15 A |
| Current - Reverse Leakage @ Vr | 14 µA @ 1200 V |
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