GC15MPS12-220
DIODE SIL CARB 1.2KV 82A TO220-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
Quality Control: Learn More
GeneSiC Semiconductor presents the GC15MPS12-220, a SiC Schottky MPS™ diode. This component offers a 1200 V DC reverse voltage (Vr) and an average rectified current (Io) of 82 A. Its forward voltage (Vf) is a maximum of 1.8 V at 15 A. Featuring a TO-220-2 package for through-hole mounting, this device operates within a junction temperature range of -55°C to 175°C. The GC15MPS12-220 exhibits a reverse leakage current of 14 µA at 1200 V and has no reverse recovery time above 500 mA. Its capacitance is 1089 pF at 1V and 1MHz. This Silicon Carbide Schottky diode is suitable for applications in power supplies, motor drives, and renewable energy systems.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1089pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 82A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 15 A |
| Current - Reverse Leakage @ Vr | 14 µA @ 1200 V |
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