GC10MPS12-252
DIODE SIL CARB 1.2KV 50A TO252-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor SiC Schottky MPS™ diode, part number GC10MPS12-252. This Silicon Carbide Schottky device offers a 1200 V reverse voltage rating and a 50 A average rectified current. Featuring a low forward voltage drop of 1.8 V at 10 A and a minimal reverse leakage current of 10 µA at 1200 V, this component is designed for high-efficiency performance. The MPS™ technology ensures zero reverse recovery time, enabling faster switching frequencies. Operating across a junction temperature range of -55°C to 175°C, it is supplied in a TO-252-2 (DPAK) surface mount package, delivered on tape and reel. This component is suitable for demanding applications in power conversion, electric vehicle charging, and industrial power supplies.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 660pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 50A |
| Supplier Device Package | TO-252-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1200 V |
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