GC10MPS12-220
DIODE SIL CARB 1.2KV 54A TO220-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
Quality Control: Learn More
GeneSiC Semiconductor SiC Schottky MPS™ diode, part number GC10MPS12-220. This TO-220-2 packaged device features a 1200 V reverse voltage rating and a 54 A average rectified forward current. The forward voltage drop (Vf) is a maximum of 1.8 V at 10 A. Key performance characteristics include a low reverse leakage current of 10 µA at 1200 V and a capacitance of 660 pF at 1 V and 1 MHz. This Silicon Carbide Schottky diode exhibits no reverse recovery time above 500 mA. It is designed for high-temperature operation, with a junction temperature range of -55°C to 175°C. Applications include power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 660pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 54A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1200 V |
Request a Quote
Clients Also Buy
GB01SLT06-214
DIODE SIL CARB 650V 1A DO214AA
GB01SLT12-214
DIODE SIL CARBIDE 1.2KV 2.5A SMB
GB02SLT12-214
DIODE SIL CARB 1.2KV 2A DO214AA
