GC08MPS12-252
DIODE SIL CARB 1.2KV 40A TO252-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor SiC Schottky MPS™ diode, part number GC08MPS12-252, offers a 1200 V reverse voltage capability with a maximum forward voltage of 1.8 V at 8 A. This component features a low average rectified current of 40 A and exhibits a minimal reverse leakage of 7 µA at its maximum rated voltage. The SiC technology provides zero reverse recovery time, enhancing efficiency in high-frequency switching applications. With a junction temperature range of -55°C to 175°C, this diode is suitable for demanding environments. The GC08MPS12-252 is housed in a TO-252-2 package, designed for surface mounting, and is supplied on tape and reel. Its performance characteristics make it ideal for power factor correction, motor drives, electric vehicle charging, and industrial power supplies. Capacitance at 1V is 545pF measured at 1MHz.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 545pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 40A |
| Supplier Device Package | TO-252-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 8 A |
| Current - Reverse Leakage @ Vr | 7 µA @ 1200 V |
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