GC08MPS12-220
DIODE SIL CARB 1.2KV 43A TO220-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor's SiC Schottky MPS™ GC08MPS12-220 is a Silicon Carbide Schottky diode designed for high-performance applications. This through-hole component features a 1200 V DC reverse voltage rating and a maximum forward voltage of 1.8 V at 8 A. With an average rectified current of 43 A and a remarkably low reverse leakage of 7 µA at 1200 V, it exhibits zero reverse recovery time for currents exceeding 500 mA. The device operates efficiently across a junction temperature range of -55°C to 175°C and is packaged in a TO-220-2 configuration. Its low capacitance, measuring 545 pF at 1V and 1MHz, makes it suitable for power factor correction, solar inverters, and electric vehicle charging infrastructure.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 545pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 43A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 8 A |
| Current - Reverse Leakage @ Vr | 7 µA @ 1200 V |
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