GC05MPS12-252
DIODE SIL CARB 1.2KV 27A TO252-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GC05MPS12-252 is a SiC Schottky MPS™ diode featuring a 1200 V reverse voltage rating and a 27 A average rectified forward current. This discrete component, designed for demanding applications, exhibits a forward voltage drop of 1.8 V maximum at 5 A. The device boasts negligible reverse recovery time, exceeding 500mA (Io), characteristic of its Silicon Carbide Schottky technology. With a junction operating temperature range of -55°C to 175°C and a low reverse leakage of 4 µA at 1200 V, it is suitable for power conversion systems in industrial, automotive, and renewable energy sectors. The component is supplied in a TO-252-2 package, also identified as TO-252-3, DPAK, and is available on Tape & Reel (TR). Its capacitance at 1V and 1MHz is rated at 359pF.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 359pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 27A |
| Supplier Device Package | TO-252-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A |
| Current - Reverse Leakage @ Vr | 4 µA @ 1200 V |
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