GC05MPS12-220
DIODE SIL CARB 1.2KV 29A TO220-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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The GeneSiC Semiconductor GC05MPS12-220 is a 1200V, 29A Silicon Carbide (SiC) Schottky diode. This through-hole component, packaged in a TO-220-2, features a maximum forward voltage (Vf) of 1.8V at 5A. With a reverse leakage current of only 4 µA at 1200V and a capacitance of 359pF at 1V and 1MHz, this device offers excellent high-voltage performance. Its zero reverse recovery time (trr) and operation across an extended junction temperature range of -55°C to 175°C make it suitable for demanding applications in power factor correction, inverters, and automotive power systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 359pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 29A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A |
| Current - Reverse Leakage @ Vr | 4 µA @ 1200 V |
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