GC02MPS12-220
DIODE SIL CARB 1.2KV 12A TO220-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GC02MPS12-220 is a 1200V, 12A Silicon Carbide (SiC) Schottky MPS™ diode in a TO-220-2 package. This through-hole component offers a low forward voltage of 1.8V at 2A and a remarkably low reverse leakage current of 2 µA at its maximum reverse voltage of 1200V. Featuring zero reverse recovery time for currents above 500mA, this device is optimized for high-frequency switching applications. The capacitance at 1V and 1MHz is 127pF. Operating within a junction temperature range of -55°C to 175°C, the GC02MPS12-220 is suitable for demanding power conversion and motor drive applications in industries such as industrial automation and electric vehicles.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 127pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 1200 V |
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