GB50SLT12-247
DIODE SIL CARB 1.2KV 50A TO247-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GB50SLT12-247 is a Silicon Carbide (SiC) Schottky diode designed for demanding power applications. This through-hole component, housed in a TO-247-2 package, offers a 1200 V reverse voltage capability and a 50 A average rectified forward current (Io). The GB50SLT12-247 exhibits a low forward voltage drop of 1.8 V at 50 A and a reverse leakage current of 1 mA at 1200 V. Its advanced SiC technology results in a zero reverse recovery time (trr) for currents exceeding 500 mA, contributing to higher efficiency and reduced switching losses. With an operating junction temperature range of -55°C to 175°C, this diode is suitable for use in industrial motor drives, electric vehicle charging infrastructure, and power supplies.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2940pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 50A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 50 A |
| Current - Reverse Leakage @ Vr | 1 mA @ 1200 V |
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