GB50MPS17-247
DIODE SIL CARB 1.7KV 216A TO247Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor's SiC Schottky MPS™ GB50MPS17-247 is a 1700 V, 216 A Silicon Carbide Schottky diode designed for high-performance applications. This through-hole component, housed in a TO-247-2 package, offers a low forward voltage of 1.8 V at 50 A and a minimal reverse leakage current of 60 µA at its maximum reverse voltage. The device features zero reverse recovery time for currents exceeding 500 mA (Io), making it ideal for high-frequency switching. Its operating junction temperature range is -55°C to 175°C. This diode is suitable for demanding power conversion and distribution systems, including electric vehicle charging, industrial power supplies, and renewable energy inverters. The device capacitance is 3193 pF at 1 V and 1 MHz.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 3193pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 216A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 50 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 1700 V |
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