GB25MPS17-247
DIODE SIL CARB 1.7KV 52A TO247-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GB25MPS17-247 is a Silicon Carbide Schottky diode from the SiC Schottky MPS™ series. This component is rated for a maximum DC reverse voltage of 1700 V and features a forward voltage of 1.8 V at 25 A. The average rectified forward current (Io) is 52 A. It exhibits a remarkably low reverse leakage current of 10 µA at 1700 V. A key characteristic is its zero reverse recovery time, specified as No Recovery Time > 500mA (Io). The diode has a capacitance of 2350pF at 1V and 1MHz. Packaged in a TO-247-2 through-hole configuration, it operates across a junction temperature range of -55°C to 175°C. This device is suitable for high-power applications in industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2350pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 52A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 25 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1700 V |
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