GB20SLT12-247
DIODE SIL CARB 1.2KV 20A TO247-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor's GB20SLT12-247 is a 1200V, 20A Silicon Carbide (SiC) Schottky diode in a TO-247-2 package. This through-hole component offers a maximum forward voltage drop of 2V at 20A and a low reverse leakage current of 200 µA at 1200V. Engineered with SiC technology, it features a reverse recovery time of 0 ns, indicating no recovery time for currents greater than 500mA. The junction operating temperature range is -55°C to 175°C. This component is suitable for demanding applications in power conversion, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 968pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2 V @ 20 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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