GB10SLT12-252
DIODE SIL CARB 1.2KV 10A TO252Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GB10SLT12-252 is a 1200V, 10A Silicon Carbide (SiC) Schottky diode. This surface mount component is housed in a TO-252 (DPAK) package. It exhibits a forward voltage of 2V at 10A and a reverse leakage current of 250 µA at its maximum reverse voltage of 1200V. The device features a capacitance of 520pF measured at 1V and 1MHz. Notably, the GB10SLT12-252 demonstrates no significant reverse recovery time above 500mA (Io). Operating temperature ranges from -55°C to 175°C. This diode finds application in power conversion systems across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 520pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-252 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2 V @ 10 A |
| Current - Reverse Leakage @ Vr | 250 µA @ 1200 V |
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