GB10SLT12-220
DIODE SIL CARB 1.2KV 10A TO220-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GB10SLT12-220 is a Silicon Carbide Schottky diode designed for high-voltage applications. This through-hole component, packaged in a TO-220-2 configuration, offers a maximum DC reverse voltage (Vr) of 1200 V and a continuous average rectified current (Io) of 10 A. It exhibits a typical forward voltage (Vf) of 1.8 V at 10 A and a low reverse leakage current of 40 µA at its maximum reverse voltage. The device features zero reverse recovery time (trr) for currents exceeding 500 mA, indicating superior switching performance. Its operating junction temperature range is -55°C to 175°C. This component is suitable for use in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 520pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 1200 V |
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