GB10MPS17-247
DIODE SIL CARB 1.7KV 50A TO247-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
Quality Control: Learn More
GeneSiC Semiconductor's GB10MPS17-247 is a Silicon Carbide (SiC) Schottky MPS™ diode designed for high-voltage applications. This device features a maximum DC reverse voltage of 1700V and an average rectified forward current capability of 50A. The forward voltage drop (Vf) is rated at a maximum of 1.8V at 10A. Manufactured with SiC technology, it offers zero reverse recovery time for currents exceeding 500mA (Io). The diode exhibits a low reverse leakage current of 12 µA at its maximum reverse voltage. With a junction operating temperature range of -55°C to 175°C, this component is suitable for demanding environments. The device is presented in a TO-247-2 package for through-hole mounting, with a typical capacitance of 669pF at 1V and 1MHz. Applications include power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 669pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 50A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 12 µA @ 1700 V |
Request a Quote
Clients Also Buy
GB01SLT06-214
DIODE SIL CARB 650V 1A DO214AA
GB01SLT12-214
DIODE SIL CARBIDE 1.2KV 2.5A SMB
GB02SLT12-214
DIODE SIL CARB 1.2KV 2A DO214AA
