GB05SLT12-252
DIODE SIL CARBIDE 1.2KV 5A TO252Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GB05SLT12-252 is a 1200V, 5A Silicon Carbide (SiC) Schottky diode in a TO-252 package. This device offers a low forward voltage of 1.8V at 2A and a reverse leakage current of 50µA at 1200V. Featuring a junction capacitance of 260pF at 1V and 1MHz, the GB05SLT12-252 exhibits no reverse recovery time above 500mA (Io), contributing to high-efficiency operation. Its robust construction supports an operating junction temperature range of -55°C to 175°C. This component is suitable for applications in high-voltage power conversion, electric vehicles, and industrial power supplies where enhanced performance and reliability are critical.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 260pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | TO-252 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
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