GB05SLT12-220
DIODE SIL CARB 1.2KV 5A TO220-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GB05SLT12-220 is a Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-220-2 package, offers a maximum DC reverse voltage of 1200V and an average rectified current capability of 5A. It exhibits a typical forward voltage of 1.8V at 2A and a very low reverse leakage current of 50 µA at its rated 1200V. The device features a capacitance of 260pF at 1V and 1MHz, and its SiC technology provides a zero reverse recovery time for currents exceeding 500mA, contributing to high-efficiency switching. The operating junction temperature range is -55°C to 175°C. This device is suitable for applications in electric vehicle charging, industrial power supplies, and renewable energy systems requiring robust high-voltage performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 260pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
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