GB05MPS17-263
DIODE SIL CARB 1.7KV 18A TO263-7Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor SiC Schottky MPS™ GB05MPS17-263 is a 1700V, 18A Silicon Carbide (SiC) Schottky diode. This component features a TO-263-8 (D2PAK) surface mount package, facilitating efficient thermal management. The GB05MPS17-263 exhibits a low junction capacitance of 470pF at 1V and 1MHz, and its SiC Schottky technology provides a fast switching speed with no significant reverse recovery time for currents above 500mA. Its robust design is suitable for demanding applications within the power electronics sector, including electric vehicle charging, industrial motor drives, and solar inverters. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 470pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 18A |
| Supplier Device Package | TO-263-7 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
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