GB05MPS17-247
DIODE SIL CARB 1.7KV 25A TO247-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor SiC Schottky MPS™ diode, part number GB05MPS17-247, offers a 1700 V DC reverse voltage and a 25 A average rectified current. This through-hole component features a TO-247-2 package and operates across a junction temperature range of -55°C to 175°C. Key electrical characteristics include a maximum forward voltage (Vf) of 1.8 V at 5 A and a low reverse leakage of 6 µA at 1700 V. The device exhibits zero reverse recovery time (trr) for currents greater than 500 mA, characteristic of its Silicon Carbide Schottky technology. Capacitance at 1V and 1MHz is 334pF. This component is suitable for high-voltage power conversion applications in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 334pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 25A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A |
| Current - Reverse Leakage @ Vr | 6 µA @ 1700 V |
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