GB02SLT12-252
DIODE SIL CARBIDE 1.2KV 5A TO252Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor SiC Schottky MPS™ diode, part number GB02SLT12-252, offers 1200V reverse voltage and a 5A average rectified current. This TO-252 packaged device features a low forward voltage of 1.8V at 2A and a minimal reverse leakage of 50 µA at 1200V. Its Silicon Carbide Schottky technology provides zero reverse recovery time at currents over 500mA. The device has a junction operating temperature range of -55°C to 175°C and a capacitance of 131pF at 1V and 1MHz. It is supplied in a Tape & Reel (TR) package for surface mounting. This component is suitable for applications in power conversion, industrial motor drives, and electric vehicle charging.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 131pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | TO-252 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
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