GB02SLT12-220
DIODE SIL CARB 1.2KV 2A TO220-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
Quality Control: Learn More
GeneSiC Semiconductor GB02SLT12-220 is a 1200V, 2A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-220-2 package, offers a maximum forward voltage (Vf) of 1.8V at 2A. It features a low reverse leakage current of 50 µA at 1200V and a junction operating temperature range of -55°C to 175°C. The device exhibits no reverse recovery time when conducting currents greater than 500mA. Its capacitance is rated at 138pF @ 1V, 1MHz. This SiC diode is suitable for applications in power conversion, electric vehicle charging, and industrial power supplies where high efficiency and performance are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 138pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
Request a Quote
Clients Also Buy
S150Q
DIODE GP 1.2KV 150A DO205AA
1N3210R
DIODE GP REV 200V 15A DO203AB
S16DR
DIODE GEN PURP 200V 16A DO220AA
