GB02SHT03-46
DIODE SIL CARBIDE 300V 4A TO46Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GB02SHT03-46 is a Silicon Carbide Schottky diode with a 300V reverse voltage rating and a 4A average rectified current. This through-hole component features a TO-46 metal can package (TO-206AB, TO-46-3). Exhibiting a low forward voltage of 1.6V at 1A and a minimal reverse leakage of 5µA at 300V, this diode boasts an exceptionally fast switching speed with zero reverse recovery time above 500mA. Its high junction operating temperature range of -55°C to 225°C makes it suitable for demanding applications. The GB02SHT03-46 is utilized in power supply units, electric vehicle charging, and industrial motor control systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 76pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | TO-46 |
| Operating Temperature - Junction | -55°C ~ 225°C |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 300 V |
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