GB02SHT01-46
DIODE SIL CARBIDE 100V 4A TO46Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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The GeneSiC Semiconductor GB02SHT01-46 is a Silicon Carbide Schottky diode rated for 100V reverse voltage and 4A average rectified current. This through-hole component, packaged in a TO-46 metal can, features a low forward voltage drop of 1.6V at 1A and a low reverse leakage of 5 µA at 100V. Its operating junction temperature range is -55°C to 210°C. Notably, this device exhibits no significant reverse recovery time above 500mA, making it suitable for high-frequency applications. The GB02SHT01-46 is utilized in power conversion, electric vehicle charging, and industrial motor control systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 76pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | TO-46 |
| Operating Temperature - Junction | -55°C ~ 210°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
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