GB01SLT12-252
DIODE SIL CARBIDE 1.2KV 1A TO252Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GB01SLT12-252 is a Silicon Carbide (SiC) Schottky diode from the SiC Schottky MPS™ series. This surface mount component, packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, offers a maximum DC reverse voltage (Vr) of 1200 V. It features a forward voltage (Vf) of 1.8 V at 1 A and an average rectified current (Io) of 1 A. The device exhibits a low reverse leakage current of 2 µA at 1200 V and nominal capacitance of 69pF @ 1V, 1MHz. With a junction operating temperature range of -55°C to 175°C, this SiC Schottky diode is characterized by zero reverse recovery time for currents greater than 500mA (Io). Applications include power conversion in electric vehicles, industrial power supplies, and renewable energy systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 69pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | TO-252 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 1 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 1200 V |
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