GB01SLT12-220
DIODE SIL CARB 1.2KV 1A TO220-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
Quality Control: Learn More
The GeneSiC Semiconductor GB01SLT12-220 is a 1200V, 1A Silicon Carbide Schottky diode. This component features a low forward voltage drop of 1.8V at 1A and a reverse leakage current of only 2µA at 1200V. Its zero reverse recovery time and high junction operating temperature range (-55°C to 175°C) make it suitable for demanding applications. The diode is housed in a standard TO-220-2 package, facilitating through-hole mounting. This device is utilized in power supply, electric vehicle, and industrial motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 69pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 1 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 1200 V |
Request a Quote
Clients Also Buy
GD30MPS06J
DIODE SIL CARB 650V 51A TO263-7
S25B
DIODE GEN PURP 100V 25A DO203AA
S70DR
DIODE GEN PURP REV 200V 70A DO5
