GAP3SLT33-220FP
DIODE SIC 3.3KV 300MA TO220FPManufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GAP3SLT33-220FP is a SiC Schottky MPS™ diode with a 3300V reverse voltage rating and a 300mA average rectified current. This through-hole component, packaged in a TO-220FP, features a forward voltage of 1.7V at 300mA and a reverse leakage of 5µA at its maximum reverse voltage. The device exhibits a capacitance of 42pF at 1V and 1MHz, with a negligible reverse recovery time. Operating across a junction temperature range of -55°C to 175°C, this Silicon Carbide Schottky diode is suitable for high-voltage power applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | - |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 42pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 300mA |
| Supplier Device Package | TO-220FP |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 3300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 300 mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 3300 V |
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