GAP05SLT80-220
DIODE SCHOTTKY 8KV 50MA AXIALManufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GAP05SLT80-220 is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. This through-hole component offers an 8000 V DC reverse voltage rating and a 50 mA average rectified forward current. Its forward voltage drop is a maximum of 4.6 V at 50 mA, with a reverse leakage current of 3.8 µA at its maximum reverse voltage. The junction operating temperature range is -55°C to 175°C. Featuring a remarkable 0 ns reverse recovery time for currents exceeding 500 mA, this diode is suitable for demanding power electronics systems found in electric vehicle charging, industrial power supplies, and renewable energy infrastructure. The device is supplied in axial packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | Axial |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 25pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 50mA |
| Supplier Device Package | - |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 8000 V |
| Voltage - Forward (Vf) (Max) @ If | 4.6 V @ 50 mA |
| Current - Reverse Leakage @ Vr | 3.8 µA @ 8000 V |
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