1N8035-GA
DIODE SIL CARB 650V 14.6A TO276Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
Quality Control: Learn More
GeneSiC Semiconductor 1N8035-GA is a Silicon Carbide Schottky Diode rated for 650V with a maximum forward current of 15A and an average rectified current of 14.6A. This device features a low forward voltage drop of 1.5V at 15A and exhibits a reverse leakage of only 5 µA at 650V. The 1N8035-GA boasts a zero reverse recovery time (trr) for currents exceeding 500mA (Io), enabling high-efficiency switching applications. Its capacitance is specified at 1107pF at 1V and 1MHz. Housed in a TO-276AA surface mount package, this diode operates across a junction temperature range of -55°C to 250°C. It is suitable for power factor correction, automotive applications, and industrial power supplies. The device is supplied in tube packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-276AA |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1107pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 14.6A |
| Supplier Device Package | TO-276 |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 15 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V |
Request a Quote
Clients Also Buy
S150Q
DIODE GP 1.2KV 150A DO205AA
1N3210R
DIODE GP REV 200V 15A DO203AB
S16DR
DIODE GEN PURP 200V 16A DO220AA
