1N8033-GA
DIODE SIL CARB 650V 4.3A TO276Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor 1N8033-GA is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This component features a 650V reverse voltage rating and a 4.3A average rectified current capability. The SiC technology enables exceptional performance characteristics, including a low forward voltage drop of 1.65V at 5A and a minimal reverse leakage current of 5 µA at 650V. Notably, this diode exhibits zero reverse recovery time for currents exceeding 500mA, contributing to significantly improved switching efficiency. Its low capacitance of 274pF at 1V and 1MHz further enhances high-frequency operation. The 1N8033-GA is housed in a TO-276AA package for surface mounting and operates across a wide junction temperature range of -55°C to 250°C. This device is well-suited for power factor correction, electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-276AA |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 274pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4.3A |
| Supplier Device Package | TO-276 |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 5 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V |
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