1N8032-GA
DIODE SIL CARB 650V 2.5A TO257Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor 1N8032-GA is a Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-257 package, offers a maximum DC reverse voltage of 650 V and an average rectified current handling capability of 2.5 A. The forward voltage drop (Vf) is a maximum of 1.3 V at 2.5 A. Exhibiting a low reverse leakage current of 5 µA at 650 V and a capacitance of 274 pF at 1 V and 1 MHz, this device features zero reverse recovery time (trr) for currents greater than 500 mA (Io). The operating junction temperature range is -55°C to 250°C. This component is suitable for applications in power conversion, electric vehicles, and industrial power systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 274pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2.5A |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 2.5 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V |
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