1N8031-GA
DIODE SIL CARBIDE 650V 1A TO276Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor 1N8031-GA is a 650V, 1A Silicon Carbide (SiC) Schottky diode in a TO-276 package. This through-hole component exhibits a low forward voltage of 1.5V at 1A and a minimal reverse leakage current of 5 µA at 650V. The 1N8031-GA features zero reverse recovery time (trr), indicating superior switching performance for applications where efficiency is paramount. With a junction operating temperature range of -55°C to 250°C and a capacitance of 76pF @ 1V, 1MHz, this diode is suitable for demanding power electronics applications in industries such as electric vehicles, renewable energy systems, and industrial power supplies.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-276AA |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 76pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | TO-276 |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V |
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