1N8030-GA
DIODE SIL CARB 650V 750MA TO257Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor 1N8030-GA is a 650V Silicon Carbide (SiC) Schottky diode packaged in a TO-257 through-hole case. This component offers an average rectified current of 750mA and a low forward voltage (Vf) of 1.39V at 750mA. It exhibits a reverse leakage current of 5 µA at its maximum reverse voltage of 650V. Notably, the 1N8030-GA features zero reverse recovery time for currents above 500mA, characteristic of SiC Schottky technology, enabling faster switching speeds and reduced switching losses. The device operates across a wide junction temperature range of -55°C to 250°C. Typical applications include power factor correction, switch mode power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 76pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 750mA |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.39 V @ 750 mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V |
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