1N8026-GA
DIODE SIL CARBIDE 1.2KV 8A TO257Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor 1N8026-GA is a 1200V Silicon Carbide Schottky diode in a TO-257 through-hole package. This device features a maximum forward voltage of 1.6V at 2.5A and an average rectified current capability of 8A. Its low reverse leakage is rated at 10 µA at 1200V, and it exhibits no reverse recovery time above 500mA. The junction operating temperature range is -55°C to 250°C. The component capacitance is 237pF at 1V and 1MHz. This SiC diode is suitable for high-power applications in industries such as industrial power supplies, renewable energy systems, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 237pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 2.5 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1200 V |
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