1N8024-GA
DIODE SIL CARB 1.2KV 750MA TO257Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
Quality Control: Learn More
GeneSiC Semiconductor 1N8024-GA is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component features a maximum DC reverse voltage of 1200 V and an average rectified current handling capability of 750 mA. The forward voltage drop at 750 mA is a maximum of 1.74 V. With a specified reverse leakage of 10 µA at 1200 V, this device offers excellent blocking characteristics. The 1N8024-GA exhibits a capacitance of 66 pF at 1V, 1MHz. Its advanced SiC technology contributes to a zero reverse recovery time for currents exceeding 500 mA, enabling faster switching speeds and reduced switching losses. The component is housed in a TO-257-3 package, suitable for demanding thermal environments with an operating junction temperature range of -55°C to 250°C. This diode is a key component in applications requiring high voltage, high efficiency, and robust performance, such as power factor correction, switch mode power supplies, and industrial motor drives.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 66pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 750mA |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | -55°C ~ 250°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.74 V @ 750 mA |
| Current - Reverse Leakage @ Vr | 10 µA @ 1200 V |
Request a Quote
Clients Also Buy
GD30MPS06J
DIODE SIL CARB 650V 51A TO263-7
S25B
DIODE GEN PURP 100V 25A DO203AA
1N2135A
DIODE GEN PURP 400V 60A DO5
