Home

Products

Discrete Semiconductor Products

Transistors

IGBTs

IGBT Modules

GB100XCP12-227

Banner
productimage

GB100XCP12-227

IGBT MODULE 1200V 100A SOT227

Manufacturer: GeneSiC Semiconductor

Categories: IGBT Modules

Quality Control: Learn More

GeneSiC Semiconductor GB100XCP12-227 is a single IGBT module with a 1200V collector-emitter breakdown voltage and a maximum collector current of 100A. This PT IGBT features a Vce(on) of 2V at 15V Vge and 100A Ic. The SOT-227 package is designed for chassis mounting, facilitating efficient thermal management. With a wide operating temperature range of -40°C to 175°C (TJ), this module is suitable for demanding applications. The module exhibits an input capacitance (Cies) of 8.55 nF at 25V. Applications include industrial motor drives, power supplies, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSOT-227-4
Mounting TypeChassis Mount
InputStandard
ConfigurationSingle
Operating Temperature-40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic2V @ 15V, 100A
NTC ThermistorNo
Supplier Device PackageSOT-227
IGBT TypePT
Current - Collector (Ic) (Max)100 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce8.55 nF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
GB01SLT06-214

DIODE SIL CARB 650V 1A DO214AA

product image
GB01SLT12-214

DIODE SIL CARBIDE 1.2KV 2.5A SMB

product image
GB02SLT12-214

DIODE SIL CARB 1.2KV 2A DO214AA