GA100SCPL12-227E
SIC 1.2KV 100AManufacturer: GeneSiC Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
GeneSiC Semiconductor's GA100SCPL12-227E is a Silicon Carbide (SiC) MOSFET array, rated for 1.2kV with a 100A current capability. This high-performance component is designed for demanding applications where superior switching efficiency and robustness are critical. Its SiC technology enables lower on-resistance, faster switching speeds, and higher operating temperatures compared to traditional silicon-based devices. Ideal for power conversion systems in electric vehicles, industrial motor drives, and renewable energy infrastructure, the GA100SCPL12-227E offers enhanced reliability and reduced power loss. This device is supplied in a tube package, facilitating efficient integration into automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | - |
| Mounting Type | - |
| Configuration | - |
| Operating Temperature | - |
| Technology | - |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | - |
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