UFT10010
DIODE MODULE GP 100V 50A TO249ABManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor UFT10010 is a diode array featuring a common cathode configuration with two diodes. This component offers a maximum DC reverse voltage of 100 V and an average rectified current of 50 A per diode. The forward voltage drop is rated at 1 V maximum at 50 A. With a reverse leakage current of 25 µA at 100 V, the UFT10010 provides efficient rectification. The device boasts a fast recovery time of 60 ns, classifying it under the fast recovery speed category. Its operating junction temperature range is -55°C to 150°C. The component is housed in a TO-249AB package for chassis mounting. This diode array is suitable for applications in power supply circuits, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-249AB |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 60 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 50A |
| Supplier Device Package | TO-249AB |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 50 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 100 V |
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