MURT40060R
DIODE MODULE GP 600V 200A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MURT40060R is a high-performance diode module featuring a common anode configuration with one pair of diodes. This component, housed in a Three Tower package, is designed for robust power applications, offering a DC reverse voltage rating of 600V and a maximum forward voltage of 1.7V at 200A. With an average rectified current (Io) per diode of 200A and a fast recovery time of 240 ns, it is suitable for demanding environments. The operating junction temperature range is -55°C to 150°C. This diode array finds application in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 240 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 200 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
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