MURT40060
DIODE MODULE GP 600V 200A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MURT40060 is a high-performance diode module designed for demanding industrial applications. This component features a 1 Pair Common Cathode configuration, delivering a robust 600V reverse voltage rating and a significant 200A average rectified current per diode. The MURT40060 boasts a fast recovery time of 240 ns, categorized as Fast Recovery =< 500ns, > 200mA (Io). With a low forward voltage drop of 1.7V at 200A and a reverse leakage of only 25 µA @ 50 V, this module ensures efficient power conversion. Its chassis mountable Three Tower package facilitates effective thermal management, operating across a junction temperature range of -55°C to 150°C. This diode array is suitable for power supply, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 240 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 200 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
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