MURT40005R
DIODE MODULE GP 50V 200A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MURT40005R is a high-performance diode module featuring a common anode configuration with two diodes. This device boasts a maximum DC reverse voltage of 50V and an impressive average rectified current of 200A per diode. The forward voltage drop is a mere 1.3V at 200A, ensuring minimal power loss. Designed for demanding applications, it operates across a junction temperature range of -55°C to 150°C. The MURT40005R exhibits a fast recovery time of 125 ns, making it suitable for high-frequency switching. With a reverse leakage current of 25 µA at 50V, it maintains excellent efficiency. This component is commonly utilized in power supply circuits, motor drives, and industrial automation systems. The robust three-tower package is designed for chassis mounting, facilitating efficient heat dissipation in power-intensive environments. The GeneSiC Semiconductor MURT40005R is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 125 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 200 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
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