MURT30005R
DIODE MODULE GP 50V 150A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor's MURT30005R is a diode module featuring a common anode configuration for two diodes. This component offers a maximum DC reverse voltage (Vr) of 50 V and a substantial average rectified current (Io) per diode of 150 A. Its forward voltage (Vf) is rated at 1.3 V at 150 A. The device exhibits a low reverse leakage current of 25 µA at 50 V and a fast reverse recovery time (trr) of 100 ns, classifying it as fast recovery (<= 500ns, > 200mA (Io)). Designed for robust performance, it operates across a junction temperature range of -55°C to 150°C. The MURT30005R is housed in a Three Tower package for efficient chassis mounting and is supplied in bulk packaging. This diode array is suitable for applications in power supply, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 100 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 150A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 150 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
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