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MURT30005R

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MURT30005R

DIODE MODULE GP 50V 150A 3TOWER

Manufacturer: GeneSiC Semiconductor

Categories: Diode Arrays

Quality Control: Learn More

GeneSiC Semiconductor's MURT30005R is a diode module featuring a common anode configuration for two diodes. This component offers a maximum DC reverse voltage (Vr) of 50 V and a substantial average rectified current (Io) per diode of 150 A. Its forward voltage (Vf) is rated at 1.3 V at 150 A. The device exhibits a low reverse leakage current of 25 µA at 50 V and a fast reverse recovery time (trr) of 100 ns, classifying it as fast recovery (<= 500ns, > 200mA (Io)). Designed for robust performance, it operates across a junction temperature range of -55°C to 150°C. The MURT30005R is housed in a Three Tower package for efficient chassis mounting and is supplied in bulk packaging. This diode array is suitable for applications in power supply, motor control, and industrial power systems.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseThree Tower
Mounting TypeChassis Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)100 ns
TechnologyStandard
Diode Configuration1 Pair Common Anode
Current - Average Rectified (Io) (per Diode)150A
Supplier Device PackageThree Tower
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 150 A
Current - Reverse Leakage @ Vr25 µA @ 50 V

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