MURT20005R
DIODE MODULE GP 50V 100A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MURT20005R is a high-performance diode module featuring a two-diode array in a common anode configuration. This component offers a maximum DC reverse voltage of 50V and a substantial average rectified current of 100A per diode. The forward voltage drop is rated at a maximum of 1.3V at 100A, with a low reverse leakage current of 25 µA at 50V. Engineered for demanding applications, the MURT20005R boasts a fast recovery time of 75 ns. Its robust design, housed in a three-tower package for efficient heat dissipation, is ideal for chassis mounting. This advanced diode module is utilized across various industrial sectors, including power supplies, motor control, and renewable energy systems. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 100A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 100 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
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