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MURT20005

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MURT20005

DIODE MODULE GP 50V 100A 3TOWER

Manufacturer: GeneSiC Semiconductor

Categories: Diode Arrays

Quality Control: Learn More

GeneSiC Semiconductor MURT20005 is a high-performance diode module featuring a common cathode configuration. This component offers a maximum DC reverse voltage of 50 V and an average rectified current of 100 A per diode. The forward voltage drop is a maximum of 1.3 V at 100 A, with a reverse leakage current of 25 µA at 50 V. The MURT20005 boasts a fast recovery time of 75 ns, classifying it within the fast recovery speed range. Designed for robust operation, it is chassis mounted and operates within a junction temperature range of -55°C to 150°C. The module is housed in a three-tower package. This diode array is suitable for applications in industrial and power electronics sectors requiring efficient rectification and high current handling.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseThree Tower
Mounting TypeChassis Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)75 ns
TechnologyStandard
Diode Configuration1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode)100A
Supplier Device PackageThree Tower
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 100 A
Current - Reverse Leakage @ Vr25 µA @ 50 V

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