MURT10020R
DIODE MODULE GP 200V 50A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
Quality Control: Learn More
GeneSiC Semiconductor MURT10020R is a high-performance diode module featuring a common anode configuration with two diodes. This component is rated for a maximum DC reverse voltage (Vr) of 200 V and an average rectified current (Io) of 50 A per diode. Its fast recovery time (trr) of 75 ns makes it suitable for applications requiring efficient switching. The forward voltage drop (Vf) is a maximum of 1.3 V at 50 A. With a reverse leakage current of 25 µA at 50 V and an operating junction temperature range of -55°C to 150°C, this module offers robust performance. The Three Tower chassis mount package facilitates efficient heat dissipation. This diode array finds application in power supply units, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard, Reverse Polarity |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 50A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 50 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
Request a Quote
Clients Also Buy
FST16030L
DIODE MOD SCHOTT 30V 80A TO249AB
GC2X8MPS12-247
DIODE ARR SIC 1200V 40A TO247-3
FST7320M
DIODE MOD SCHOTT 20V 35A D61-3M