MURT10020
DIODE MODULE GP 200V 50A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MURT10020 is a three-tower diode module featuring a common cathode configuration. This device offers a maximum DC reverse voltage of 200 V and a continuous average rectified current of 50 A per diode. The forward voltage drop is specified at 1.3 V at 50 A. Reverse leakage current is 25 µA at 50 V. With a reverse recovery time of 75 ns, this module is classified as fast recovery. Operating junction temperatures range from -55°C to 150°C. The chassis mount package is supplied in bulk. This component is suitable for applications in industrial power supplies, electric vehicle charging, and motor control systems where robust rectification and efficient switching are critical.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 50A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 50 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
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