MURT10010R
DIODE MODULE GP 100V 50A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MURT10010R is a diode module featuring a 1 pair common anode configuration. This component is rated for a maximum DC reverse voltage of 100 V and an average rectified current of 50 A per diode. The forward voltage (Vf) is a maximum of 1.3 V at 50 A, with a reverse leakage current of 25 µA at 50 V. Designed for demanding applications, it offers a fast recovery time (trr) of 75 ns. The MURT10010R is chassis mounted and packaged in a Three Tower configuration, suitable for industrial automation, power supplies, and electric vehicle charging systems. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 50A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 50 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
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