MURT10010
DIODE MODULE GP 100V 50A 3TOWERManufacturer: GeneSiC Semiconductor
Categories: Diode Arrays
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GeneSiC Semiconductor MURT10010 is a Diode Array featuring a 1 pair common cathode configuration. This component offers a 100V reverse voltage (Vr) and a 50A average rectified current (Io) per diode. The forward voltage drop (Vf) is a maximum of 1.3V at 50A. With a reverse leakage of 25 µA at 50V and a reverse recovery time (trr) of 75 ns, this diode array is suitable for applications requiring fast recovery characteristics. The operating junction temperature range is -55°C to 150°C. Designed for chassis mounting, the MURT10010 is packaged in a Three Tower configuration. This component finds application in power supply, motor control, and industrial power systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Three Tower |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 50A |
| Supplier Device Package | Three Tower |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 50 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
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